? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 12n100 10 a 10n100 9 a i dm t c = 25 c, pulse width limited by t jm 12n100 48 a 10n100 40 a i ar t c = 25 c 12n100 12 a 10n100 10 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8?v dss t j = 25 c50 a v gs = 0 v t j = 125 c 1ma r ds(on) v gs = 10 v, i d = i t 12n100 1.1 ? notes 1 & 2 10n100 1.2 ? ds98589-b (10/02) isoplus 247 tm features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<50pf) low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly space savings high power density g = gate d = drain s = source * patent pending isolated back surface* v dss i d25 r ds(on) ixfr 12n100q 1000 v 10 a 1.1 ? ? ? ? ? ixfr 10n100q 1000 v 9 a 1.20 ? ? ? ? ? t rr 300 s hiperfet tm power mosfets isoplus247 tm q class (electrically isolated back surface) n-channel enhancement mode avalanche rated, high dv/dt low gate charge and capacitances
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = i t note 1 4 10 s c iss 2900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 pf c rss 50 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 23 ns t d(off) r g = 1 ? (external), 40 n s t f 15 ns q g(on) 90 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 30 nc q gd 40 nc r thjc 0.50 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 12 a i sm repetitive; pulse width limited by t jm 48 a v sd i f = i s , v gs = 0 v, note 1 1.3 v t rr 200 300 ns q rm 1.6 c i rm 7a i f = i s , -di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % 2. i t test current: ixfr10n100 i t = 5a ixfr12n100 i t = 6a ixfr 10n100q ixfr 12n100q isoplus 247 outline note: please see ixfh12n100q data sheet for characteristic curves.
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